Title :
The new power semiconductor generation: 1200V IGBT4 and EmCon4 Diode
Author :
Volke, A. ; Baessler, M. ; Umbach, Frank ; Hille, Frank ; Rusche, W. ; Hornkamp, M.
Author_Institution :
Infineon Technol. China Co. Ltd., Shanghai
Abstract :
This paper presents Infineonpsilas latest 1200 V power semiconductor generation: IGBT4 and EmCon4 diode. The new technology comes as a family optimized for applications in three different power levels: low, medium, and high power. Each part is balanced accordingly in its dynamic and static losses, switching frequency, and softness. In this paper the new technology is introduced, the electrical and thermal performance discussed in detail.
Keywords :
insulated gate bipolar transistors; power semiconductor diodes; EmCon4 diode; IGBT4; Infineon; dynamic loss; power semiconductor generation; static loss; switching frequency; voltage 1200 V; Epitaxial layers; Insulated gate bipolar transistors; Power electronics; Power generation; Semiconductor diodes; Substrates; Switching frequency; Tail; Temperature; Voltage control;
Conference_Titel :
Power Electronics, 2006. IICPE 2006. India International Conference on
Conference_Location :
Chennai
Print_ISBN :
978-1-4244-3450-3
Electronic_ISBN :
978-1-4244-3451-0
DOI :
10.1109/IICPE.2006.4685345
