DocumentCode :
3527301
Title :
Flexible CNT-array cathodes: Effect of bending on field electron emission
Author :
Hong, Nguyen Tuan ; Tam, Ngo Thi Thanh ; Minh, Phan Ngoc ; Khoi, Phan Hong ; Koh, Ken Ha ; Lee, Soonil
Author_Institution :
Div. of Energy Syst. Res., Ajou Univ., Suwon, South Korea
fYear :
2009
fDate :
20-24 July 2009
Firstpage :
37
Lastpage :
38
Abstract :
In this work, we report results showing a correlation between the curvature of PDMS-supported CNT-tip arrays and their emission properties. CNTs were produced by using a hot-filament chemical-vapor-deposition (HFCVD) setup. VA-CNTs were synthesized using 28-Torr mixtures of methane (20 SCCM) and hydrogen (30 SCCM) as feedstock. Temperatures of filaments and substrates were 2050 and 750 degC, respectively. In order to make flexible emitters, pre-polymer PDMS was initially coated on the extremely clean, flat, and smooth surfaces of rigid supports, such as silicon and glass slide. The flatness and smoothness were necessary to form a thin and uniform pre-polymer layer, and the cleanness was important for easy detachment of PDMS films from the supports after curing. Next, we put a silicon substrate with a patterned VACNT-column array upside down on a support covered with an uncured thin pre-polymer layer so that uncured pre-polymer could infiltrate a VACNT-column array evenly from the contact side. We were able to control the PDMS-infiltration height by changing curing temperature of PDMS. A chemical etching process was required to expose CNTs in the back side. A solution of TBAF (tetrabutylammonium fluoride) inNMP (N-Methelpyrrolidone) (3:1; v/v; NMP/75% TBAF in water) was used to etch PDMS sufficiently without degrading the mechanical and elastic characteristics of the PDMS platform.
Keywords :
bending; carbon nanotubes; cathodes; chemical vapour deposition; curing; field emitter arrays; polymer films; C; PDMS films; bending; curing; curvature; field electron emission; flatness; flexible CNT-array cathodes; hot filament chemical vapor deposition; methane-hydrogen mixtures; pressure 28 torr; smooth surfaces; temperature 2050 degC; temperature 750 degC; Cathodes; Chemicals; Curing; Electron emission; Etching; Glass; Hydrogen; Silicon; Surface cleaning; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location :
Shizuoka
Print_ISBN :
978-1-4244-3587-6
Electronic_ISBN :
978-1-4244-3588-3
Type :
conf
DOI :
10.1109/IVNC.2009.5271638
Filename :
5271638
Link To Document :
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