Title :
Spin transfer effect in magnetic tunnel junction with low resistance
Author :
Meng, Hao ; Wang, Jian-Ping
Author_Institution :
The Center for Micromagnetic & Inf. Technol., Minnesota Univ., Minneapolis, MN, USA
Abstract :
In this work, current-induced-magnetization-switching (CIMS) in low resistance magnetic tunnel junction structure (RA MTJ) with relatively low critical current density is demonstrated. The MTJ structure is composed of Si/SiO2/bottom electrode/Ta/IrMn/CoFe/Al/CoFe/Ta/top electrode. The magneto-resistance (MR) ratio induced by current is up to 16%. Furthermore, in order to decrease the critical current density, adding a nanogranular layer in the MTJ multilayer structure is proposed which will reduce the critical current density and remain high MR signal.
Keywords :
aluminium; cobalt alloys; current density; iridium alloys; iron alloys; magnetic multilayers; magnetic switching; magnetic tunnelling; magnetisation; magnetoresistance; manganese alloys; silicon; silicon compounds; tantalum; MTJ multilayer structure; Si-SiO2-Ta-IrMn-CoFe-Al; critical current density; current-induced-magnetization-switching; electrode; low resistance magnetic tunnel junction structure; magneto-resistance ratio; nanogranular layer; spin transfer; Breakdown voltage; Computer integrated manufacturing; Critical current density; Electric resistance; Electrodes; Lithography; Magnetic devices; Magnetic fields; Magnetic tunneling; Switches;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1463498
