DocumentCode :
3527553
Title :
Image contrast dependence on the field emitter in near field emission scanning electron microscopy
Author :
Scholder, O. ; Kirk, T.L. ; De Pietro, L.G. ; Bähler, T. ; Ramsperger, U. ; Pescia, D.
Author_Institution :
Lab. fur Festkorperphys., ETH Zurich, Zurich, Switzerland
fYear :
2009
fDate :
20-24 July 2009
Firstpage :
197
Lastpage :
198
Abstract :
We have performed a comparative study of the image contrast enhancement dependence on field emitter tips using NFESEM. Effective tip emission radii were extracted from the Fowler-Nordheim behavior of a polycrystalline, (310), (111), and (lOO)-oriented W-tips. We observed no dramatic difference between the I-V values of the various tips. The effective emission radii are calculated using R. Corner´s formalism, at distances between 20nm and 60nm above the specimen. We observe a dependence on the emission radii in this range; however it is within the 20% error due to the k-factor uncertainty. The emitters that share similar emission radii values show a dependence on the emitter crystalline orientation, which was observed in the resolution of the mono-atomic steps on a W (110) substrate surface. Subsequent STM imaging of the W (110) surface in constant current (CC) mode confirm sharp step edges with single atom height. We evaluate the resolution of our images, as determined by the sharpness of the step edges, and compare it to theoretical values determined by the effective emission radii and tip-sample separation.
Keywords :
field emission; field emission electron microscopy; scanning electron microscopy; scanning tunnelling microscopy; tungsten; Fowler-Nordheim behavior; STM imaging; W; field emitter; image contrast enhancement; k-factor uncertainty; near field emission scanning electron microscopy; scanning tunnelling microscopy; Atomic measurements; Electron beams; Electron emission; Image generation; Image resolution; Kirk field collapse effect; Scanning electron microscopy; Spatial resolution; Surface topography; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location :
Shizuoka
Print_ISBN :
978-1-4244-3587-6
Electronic_ISBN :
978-1-4244-3588-3
Type :
conf
DOI :
10.1109/IVNC.2009.5271652
Filename :
5271652
Link To Document :
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