Field emission characteristics of 2D hole accumulation layer on H-terminated CVD diamond

Field emission properties from 2D-hole accumulation layers on H-terminated undoped intrinsic CVD diamonds were measured. We also measured field emission properties of pand n-type semiconducting diamonds with H-terminations. Plateau in field emission properties of undoped intrinsic diamond were observed, while no pand n-type diamonds showed continuous increase of emission currents. It was considered that the discrete energy levels of hole existed in the 2D-hole accumulation layer on high quality CVD diamond films. Our results indicated that 2D-hole accumulation layer on high quality CVD diamond films was one of the candidates of field emitter materials having narrow energy range electron beams.