Title :
An improved analytic expression for write amplification in NAND flash
Author :
Luojie, Xiang ; Kurkoski, Brian M.
Author_Institution :
Sch. of Inf. & Software Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fDate :
Jan. 30 2012-Feb. 2 2012
Abstract :
Agarwal et al. gave a closed-form expression for write amplification in NAND flash memory by finding the probability of a page being valid over the whole flash memory. This paper gives an improved analytic expression for write amplification in NAND flash memory by finding the probability of a page being invalid in the block selected for garbage collection. The improved expression uses the Lambert W function. Through asymptotic analysis, write amplification is shown to depend on the overprovisioning factor only, consistent with the previous work. Comparison with numerical simulations shows that the improved expression achieves a more accurate prediction of write amplification. For example, when the overprovisioning factor is 0.3, the improved expression gives a write amplification of 2.36 whereas that of the previous work gives 2.17, when the actual value is 2.35.
Keywords :
NAND circuits; amplification; flash memories; probability; Lambert W function; NAND flash memory; asymptotic analysis; garbage collection; write amplification; Analytical models; Ash; Closed-form solutions; Equations; Flash memory; Mathematical model; Stationary state;
Conference_Titel :
Computing, Networking and Communications (ICNC), 2012 International Conference on
Conference_Location :
Maui, HI
Print_ISBN :
978-1-4673-0008-7
Electronic_ISBN :
978-1-4673-0723-9
DOI :
10.1109/ICCNC.2012.6167472