DocumentCode :
3528178
Title :
S1
Author :
Koops, Hans W. P.
Author_Institution :
HaWilKo GmbH, Ober-Ramstadt, Germany
fYear :
2009
fDate :
20-24 July 2009
Firstpage :
3
Lastpage :
4
Abstract :
Field electron emitters are made from these materials: 3D materials, like in metals e.g. W, Mo and in metal compounds HfC3, W/C4, Co/C5, are applied as electron sources in transmission electron microscopes TEM, scanning electron microscopes SEM, and signal amplifier tubes. Technical applications longed for long lasting emitters, which are found using a 2D emitter Zr-O-W. Other 2D emitters are searched for field emitter flat panel screens, like coralline carbon, and sheet shaped C emitters. 1D emitters are found in carbon nanotubes, and in diamond with strings of conducting sp2 material in the sp3 matrix, and are employed in power tubes, or in SiO2 with nano-granular Si crystals. Also edge emitters are investigated as FED sources for FED-pixels. Electron beam induced deposition EBID, is a way to produce 0D electron gas materials as nano-granular compound materials. Experimental results with these materials are gained from field emission I/V-curves and electron conduction measurements e.g. Poole Frenkel-curves at varying temperature. Here characteristic energies for variable range hopping are obtained for Au/C material and for Pt/C material. The brightness beta of such sources is beta > 2 109 A/cm2 sr. An explanation for the extraordinary capability of several EBID materials is brought forward by arguing the geometry quantisation of electron energy levels in 0D-quantum dots. This is revealed from high voltage high resolution TEM images of free standing tips. Small crystal electron modes is described as paths of standing electron waves.
Keywords :
Poole-Frenkel effect; carbon nanotubes; cobalt; diamond; electron field emission; elemental semiconductors; field emission displays; hafnium compounds; hopping conduction; molybdenum; scanning electron microscopy; semiconductor quantum dots; silicon; silicon compounds; transmission electron microscopy; tungsten; two-dimensional electron gas; zirconium compounds; 0D electron gas material; 0D-quantum dots; 1D electron gas; 1D emitters; 2D electron gas; 2D emitter; 3D electron gas; C; Co-C; EBID; FED sources; FED-pixels; HfC; Mo; Poole Frenkel-curves; SEM; SiO2-Si; W; W-C; Zr-O-W; brightness; carbon nanotubes; coralline carbon; edge emitters; electron beam induced deposition; electron conduction measurements; electron energy levels; electron sources; field electron emitters; field emission I-V-curves; field emitter flat panel screens; geometry quantisation; high voltage high resolution TEM; nanogranular compound materials; nanogranular crystals; power tubes; scanning electron microscopy; sheet shaped carbon emitters; signal amplifier tubes; transmission electron microscopy; variable range hopping;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location :
Shizuoka
Print_ISBN :
978-1-4244-3587-6
Electronic_ISBN :
978-1-4244-3588-3
Type :
conf
DOI :
10.1109/IVNC.2009.5271687
Filename :
5271687
Link To Document :
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