Title :
Noise and interference characterization for MLC flash memories
Author :
Moon, Jaekyun ; No, Jaehyeong ; Lee, Sangchul ; Kim, Sangsik ; Yang, Joongseop ; Chang, Seung Ho
Author_Institution :
Dept. of Electr. Eng., KAIST, Daejeon, South Korea
fDate :
Jan. 30 2012-Feb. 2 2012
Abstract :
This paper provides statistical analysis on real data taken from state-of-the-art MLC NAND flash memory cells. The analysis allows separation of different sources affecting the output values of the cell. Interference due to floating gate coupling is isolated. The effect of noise and interference on the victim cell after repeated program/erase cycles as well as baking is investigated.
Keywords :
NAND circuits; flash memories; integrated circuit noise; interference (signal); statistical analysis; MLC NAND flash memory cells; floating gate coupling; interference characterization; noise effect; program-erase cycles; statistical analysis; Aging; Erbium; Interference; Noise; Programming; Random variables; Shape;
Conference_Titel :
Computing, Networking and Communications (ICNC), 2012 International Conference on
Conference_Location :
Maui, HI
Print_ISBN :
978-1-4673-0008-7
Electronic_ISBN :
978-1-4673-0723-9
DOI :
10.1109/ICCNC.2012.6167491
