Title :
Applicability of Redundant Pairs of SOI Transistors for Analog Circuits and Their Applications to Phase-Locked Loop Circuits
Author :
Makihara, A. ; Yokose, Takeshi ; Tsuchiya, Y. ; Miyazaki, Yuji ; Abe, H. ; Shindou, H. ; Ebihara, Tadashi ; Maru, A. ; Morikawa, Kota ; Kuboyama, Satoshi ; Tamura, Takuya
Author_Institution :
High Reliability Eng. Corp., Tsukuba, Japan
Abstract :
Redundant pairs of SOI transistors have been utilized as a Radiation Hardening-By-Design technique. Their applicability was subsequently extended for analog circuits, such as current mirror circuits, and successfully demonstrated with a phase-locked loop circuit.
Keywords :
analogue integrated circuits; current mirrors; phase locked loops; radiation hardening (electronics); silicon-on-insulator; SOI transistors; Si; analog circuits; current mirror circuits; phase-locked loop circuits; radiation hardening; redundant pairs; Analog circuits; Ions; Mirrors; Phase locked loops; Switches; Transistors; Voltage-controlled oscillators; Phase-locked loop circuits; SOI; radiation hardening-by-design; single-event effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2237039
