Title :
Simulation method and application for the hot carrier-induced device degradation of NMOSFET
Author :
Lee, Sun-Ghil ; Choi, Jae-Hoon ; Kim, Sang-Yong ; Nam, Myung-Hee ; Lee, Joo-Hyeon ; Seo, Kang-Bong ; Yoon, Han-Sub
Author_Institution :
Dept. of Device Phys., Hyundai Electron. Ind. Co Ltd., Ichon, South Korea
Abstract :
Hot carriers deteriorate the interface between Si and gate oxide, which causes the change of current level. We suggest a method for simulating hot carrier-induced device degradation. Based on the present model, we are able to calculate degraded I-V characteristics with time using 2-D process simulation TSUPREM-4 and 2-D device simulator MEDICI. We compare simulated results with experimental ones
Keywords :
MOSFET; hot carriers; semiconductor device models; 2D device simulation; 2D process simulation; I-V characteristics; MEDICI; NMOSFET; Si-gate oxide interface; TSUPREM-4; hot carrier-induced device degradation; model; Data mining; Degradation; Electron traps; FETs; Hot carriers; MOSFET circuits; Medical simulation; Occupational stress; Physics; Shape control;
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
DOI :
10.1109/ICVC.1999.820818
