Title :
Blanket tilt implanted shallow trench isolation (BTI-STI) process for enhanced DRAM retention time characteristics
Author :
Son, Jeong-Hwan ; Park, Kun-Sik ; Nam, Jeong-Seok ; Chung, Shin-Young ; Yang, Hyeong-Mo ; Park, Seung-Hyun ; Lee, Youngjong ; Lee, Kyungho
Author_Institution :
R&D Div., Hyundai Micro Electron. Co. Ltd., Cheongiu, South Korea
Abstract :
Blanket tilt implanted shallow trench isolation (BTI-STI) process is proposed and investigated for enhanced retention time characteristics of high density DRAM. It is confirmed that BTI-STI process can improve the tail retention time due to low surface channel doping and no degradation is observed for buried-channel p-MOSFET even at narrow width. The proposed process is useful for realizing future high density DRAM without increase in process complexity
Keywords :
DRAM chips; ion implantation; isolation technology; blanket tilt implanted shallow trench isolation; buried-channel p-MOSFET; high density DRAM; retention time characteristics; surface channel doping; Boron; CMOS process; Degradation; MOS devices; MOSFET circuits; Plugs; Probability distribution; Random access memory; Threshold voltage; Thyristors;
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
DOI :
10.1109/ICVC.1999.820844
