DocumentCode :
3528817
Title :
Magnetotransport properties of a room temperature ferromagnet (Ga, Mn)N
Author :
Holmberg, H. ; Lebedeva, N. ; Novikov, S. ; Kuivalainen, P. ; Malfait, M. ; Moschalkov, V.V. ; Kostamo, P.
Author_Institution :
Electron Phys. Lab., Helsinki Univ. of Technol., Espoo, Finland
fYear :
2005
fDate :
4-8 April 2005
Firstpage :
279
Lastpage :
280
Abstract :
Ferromagnetic (Ga, Mn)N thin film is fabricated using a solid state diffusion. Room temperature ferromagnetism is confirmed in n-type Mn-doped GaN thin films by observing anomalous Hall effect and by direct magnetization measurements. The negative magnetoresistance and the measured resistivity vs. temperature indicate that the dominant scattering mechanism at temperatures close to Curie temperature TC is the spin-disorder scattering.
Keywords :
Curie temperature; Hall effect; III-V semiconductors; diffusion; ferromagnetic materials; gallium compounds; magnetic thin films; magnetisation; magnetoresistance; manganese; semiconductor thin films; semimagnetic semiconductors; wide band gap semiconductors; 293 to 298 K; Curie temperature; GaN:Mn; anomalous Hall effect; direct magnetization measurements; dominant scattering mechanism; ferromagnetic thin film; negative magnetoresistance; resistivity; room temperature; solid state diffusion; spin-disorder scattering; Conductivity; Gallium nitride; Hall effect; Magnetic properties; Magnetization; Magnetoresistance; Scattering; Solid state circuits; Temperature; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
Type :
conf
DOI :
10.1109/INTMAG.2005.1463568
Filename :
1463568
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3528817
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