Title :
A novel approach to high current hermetic packaging
Author :
Morozowich, D.K.
Author_Institution :
Powerex Inc., Youngwood, PA, USA
Abstract :
This paper presents research in the design and construction of high current hermetic modules. This construction uses thick copper metallization such as direct bonded copper (DEC) or active brazed copper to alumina or aluminum nitride to create a package which passes leak rate tests of less than 1×10-7. The principle features of these style packages are pure copper paths between the silicon devices and the terminals, and terminals of virtually unlimited size. Several current projects and applications of this technology are also discussed
Keywords :
alumina; aluminium compounds; copper; modules; semiconductor device metallisation; semiconductor device packaging; Al2O3; AlN; Cu; active brazed copper; alumina; aluminum nitride; direct bonded copper; high current hermetic modules; high current hermetic packaging; leak rate tests; pure copper paths; silicon devices; terminals; thick copper metallization; Aluminum; Bonding; Ceramics; Copper; Glass; Packaging machines; Pins; Seals; Silicon carbide; Thermal conductivity;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1998. APEC '98. Conference Proceedings 1998., Thirteenth Annual
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-4340-9
DOI :
10.1109/APEC.1998.647738
