Title :
Evaluation of plasma-induced charging damage on metal contact process
Author :
Shin, Kyoung-Sub ; Kim, Ji-Soo ; Park, Wan-Jae ; Kang, Chang-Jin ; Ahn, Tae-Hyuk ; Moon, Joo-Tae ; Lee, Sang-In
Author_Institution :
SAMSUNG Electron. Co. Ltd., Kyungki, South Korea
Abstract :
The evaluation of plasma-induced charging damage in a metal contact process has been studied with a two dimensional Monte-Carlo simulation and related experiments. From the simulation, it is concluded that the linear shrinkage of the design rule possibly evokes exponential plasma-induced charging damage on the gate oxide during the plasma process. We also confirmed the simulation results with the two different experiments, in-situ charge-up monitoring wafers and fully fabricated test wafers. A phase-controlled pulsed inductively coupled plasma is proposed to suppress the plasma-induced charging damage. Preliminary results show that charging damage is strongly suppressed when the phase delay of the bias power to the source power is near to 180 degrees
Keywords :
CMOS integrated circuits; MOSFET; Monte Carlo methods; integrated circuit metallisation; plasma materials processing; process monitoring; semiconductor process modelling; surface charging; surface potential; 0.18 mum; CMOS technology; NMOS; PMOS; bias power phase delay; charging damage suppression; design rule linear shrinkage; exponential plasma-induced charging damage; fabricated test wafers; gate oxide; in-situ charge-up monitoring wafers; metal contact process; phase-controlled pulsed inductively coupled plasma; plasma-induced charging damage; surface potential; two dimensional Monte-Carlo simulation; Current measurement; Electrons; Monitoring; Plasma density; Plasma devices; Plasma measurements; Plasma simulation; Plasma sources; Plasma temperature; Probes;
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
DOI :
10.1109/ICVC.1999.820853
