Simulation of low-energy E-beam lithography

In this paper, we present models of simulation programs for low energy electron beam lithography and prove the validity of them by comparison with experimental results. For fast electrons (E>100 eV), hybrid scattering models are used and for slow electrons (E<100 eV), a cascade model causing the multiplication of electrons is used. When the electrons are emitted from the specimen, the conditions of emission are considered. The simulated depths after development are compared with the experimental results by Rishton (1982) and Schock (1997). In addition, the second cross-over (E2) was obtained from the graph of the total electron yield and compared with Joy´s experimental results (1995)