Experimental investigation of temperature dependent RF performances of RF-CMOS devices

This paper presents the degradation of f_T and f_max in CMOS devices at elevated temperature. Since MOS transistors in RF applications are usually in saturation region and f_T of CMOS devices is proportional to g_m, a simple empirical model for temperature dependence of g_m at any measurement bias has been suggested by considering the temperature dependence of carrier mobility and a saturation velocity simultaneously. From the empirical temperature behavior of g_m, we can predict the enhanced RF performances of CMOS at low temperature