Title :
Silicon MOS memory with self-aligned quantum dot on narrow channel
Author :
Han, Sangyeon ; Hwang, Taekeun ; Shin, Hyungcheol
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
Abstract :
The essential technology for fabricating the quantum dot flash memory is nanolithography. With E-beam patterning technology and Cl2 based RIE (Reactive Ion Etching), a self-aligned 100 nm wide quantum dot and 100 nm wide narrow channel were fabricated. Also, quantum dot flash memory was fabricated. The memory operation was observed. The threshold voltage shift was about 1.0 V and the corresponding number of electrons involved in this operation was estimated to be about 70. The memory also showed excellent retention characteristics
Keywords :
MOS memory circuits; electron beam lithography; elemental semiconductors; flash memories; nanotechnology; semiconductor quantum dots; silicon; sputter etching; 100 nm; 25 V; Cl2; Cl2 based RIE; E-beam patterning technology; Si; Si MOS memory; memory operation; nanolithography; narrow channel; quantum dot flash memory; reactive ion etching; retention characteristics; self-aligned quantum dot; threshold voltage shift; Dry etching; Electrons; Flash memory; Hysteresis; Oxidation; Quantum dots; Resists; Silicon; Threshold voltage; US Department of Transportation;
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
DOI :
10.1109/ICVC.1999.820869
