Silicon MOS memory with self-aligned quantum dot on narrow channel

Author

Han, Sangyeon ; Hwang, Taekeun ; Shin, Hyungcheol

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea

fYear

1999

fDate

1999

Firstpage

187

Lastpage

189

Abstract

The essential technology for fabricating the quantum dot flash memory is nanolithography. With E-beam patterning technology and Cl₂ based RIE (Reactive Ion Etching), a self-aligned 100 nm wide quantum dot and 100 nm wide narrow channel were fabricated. Also, quantum dot flash memory was fabricated. The memory operation was observed. The threshold voltage shift was about 1.0 V and the corresponding number of electrons involved in this operation was estimated to be about 70. The memory also showed excellent retention characteristics

Keywords

MOS memory circuits; electron beam lithography; elemental semiconductors; flash memories; nanotechnology; semiconductor quantum dots; silicon; sputter etching; 100 nm; 25 V; Cl₂; Cl₂ based RIE; E-beam patterning technology; Si; Si MOS memory; memory operation; nanolithography; narrow channel; quantum dot flash memory; reactive ion etching; retention characteristics; self-aligned quantum dot; threshold voltage shift; Dry etching; Electrons; Flash memory; Hysteresis; Oxidation; Quantum dots; Resists; Silicon; Threshold voltage; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI and CAD, 1999. ICVC '99. 6th International Conference on

Conference_Location

Seoul

Print_ISBN

0-7803-5727-2

Type

conf

DOI

10.1109/ICVC.1999.820869

Filename

820869