CRÈME-MC: A physics-based single event effects tool

Author

Sierawski, Brian D. ; Mendenhall, Marcus H. ; Weller, Robert A. ; Reed, Robert A. ; Adams, James H. ; Watts, John W. ; Barghouty, Abdulnasser F.

Author_Institution

Inst. for Space & Defense Electron., Vanderbilt Univ., Nashville, TN, USA

fYear

2010

fDate

Oct. 30 2010-Nov. 6 2010

Firstpage

1258

Lastpage

1261

Abstract

The CRÈME suite of tools have been extensively used to predict the effects of cosmic rays on microelectronics in space. These tools only consider electronic stopping of ions and nuclear reactions from protons on silicon. Ion-ion physics and the inclusion of additional electronic materials are required to predict large energy deposition events. The successor to the rate prediction tools, CRÈME-MC, is a Geant4 based application intended to address the challenges associated with highly-scaled or radiation-hardened devices.

Keywords

high energy physics instrumentation computing; ion beam effects; nuclear electronics; radiation monitoring; CREME tool suite; Geant4 application; cosmic rays; electronic ion stopping; electronic materials; energy deposition events; ion-ion physics; nuclear reactions; radiation-hardened devices; single event effects tool; Computational modeling; Integrated circuit modeling; Materials; Microelectronics; Monte Carlo methods; Single event upset; Solid modeling; CRÈME; Monte Carlo; rate prediction; single event upset;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE

Conference_Location

Knoxville, TN

ISSN

1095-7863

Print_ISBN

978-1-4244-9106-3

Type

conf

DOI

10.1109/NSSMIC.2010.5873968

Filename

5873968