A study on soft- and hard-breakdowns in MOS capacitors using the parallel stressing method

Author

Sim, Jae-Sung ; Nam, In-Ho ; Hong, Sung-In ; Lee, Jong-Duk ; Park, Byung-Gook

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

1999

fDate

1999

Firstpage

194

Lastpage

196

Abstract

In this paper, we propose a new experimental technique, namely the parallel stressing method to investigate the breakdown mechanism of MOS capacitors. The SILC characteristics of the region excluding the breakdown spot of a broken-down capacitor can be deduced, utilizing this method. It was shown that HBD as well as SBD takes place locally, as expected. Multiple SBD phenomena at different points on a capacitor have been verified. However, HBD has not occurred multiply, which is thought to be because of the decrease in stress intensity after the event

Keywords

MOS capacitors; dielectric thin films; leakage currents; semiconductor device breakdown; semiconductor device measurement; semiconductor device reliability; MOS capacitors; SILC characteristics; hard-breakdown; parallel stressing method; soft-breakdown; stress induced leakage current; stress intensity reduction; Area measurement; Current density; Degradation; Electric breakdown; Leakage current; MOS capacitors; Measurement techniques; Stress measurement; Testing; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI and CAD, 1999. ICVC '99. 6th International Conference on

Conference_Location

Seoul

Print_ISBN

0-7803-5727-2

Type

conf

DOI

10.1109/ICVC.1999.820872

Filename

820872