• DocumentCode
    3529170
  • Title

    Interconnect technology: copper and low-k dielectrics

  • Author

    Lee, Hyeon-Deok

  • Author_Institution
    Samsung Electron., Yongin, South Korea
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    201
  • Abstract
    Summary form only given, as follows. The interconnect system in ULSI has drawn greater attention nowadays than ever before. This is because the minimization of RC delay of interconnect has to be satisfied in order to achieve high performance of logic device in the GHz era. The major approach to lower RC delay has been directed toward integration of copper and low-k dielectric materials. In this paper, the current status of copper (barrier, seed, and electroplating) and low-k dielectric technologies and their integration issues are discussed
  • Keywords
    ULSI; copper; delays; dielectric thin films; high-speed integrated circuits; integrated circuit interconnections; integrated logic circuits; permittivity; Cu; RC delay minimization; ULSI; barrier material; electroplating; integration issues; interconnect technology; logic devices; low-k dielectrics; Biographies; Chemical engineering; Chemical technology; Copper; Delay; Dielectrics; Logic devices; Metallization; Random access memory; Research and development;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI and CAD, 1999. ICVC '99. 6th International Conference on
  • Conference_Location
    Seoul
  • Print_ISBN
    0-7803-5727-2
  • Type

    conf

  • DOI
    10.1109/ICVC.1999.820875
  • Filename
    820875