Title :
HOSP(R) as a low dielectric material: comparative study against hydrogen silsesquioxane
Author :
Kim, Sun-Young ; Chung, Sungwoong ; Shin, Joohan ; Park, Nae Hak ; Kim, Jun Ki ; Park, Jin Won
Author_Institution :
Hundai Microlectron., Cheongju, South Korea
Abstract :
Low-k candidate SOG material HOSP(R) is evaluated and compared to HSQ. Particularly, the chemical nature of the film and the effects of various processing steps were investigated using FTIR, TDS, oscilloscope and stress gauge. The water absorption upon various post etch treatments turned out to be a crucial factor affecting the dielectric properties of the film. HOSP(R) proved to be a dielectric with lower k value compared to the HSQ film but was more vulnerable to moisture uptake
Keywords :
Fourier transform spectra; dielectric thin films; etching; infrared spectra; integrated circuit interconnections; organic compounds; permittivity; polymer films; sorption; thermal stability; thermally stimulated desorption; FTIR; HOSP; IMD material; TDS; chemical nature; dielectric film; dielectric properties; hydrido organo siloxane polymer; hydrogen silsesquioxane; low-k candidate SOG material; moisture uptake; oscilloscope; post etch treatments; processing steps; stress gauge; thermal stability; water absorption; Absorption; Dielectric constant; Dielectric materials; Etching; Heat treatment; Hydrogen; Inorganic materials; Positron emission tomography; Semiconductor materials; Thermal stability;
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
DOI :
10.1109/ICVC.1999.820882
