DocumentCode
3529337
Title
Comparison of the characteristics of tunneling oxide and tunneling ON for p-channel nano-crystal memory
Author
Han, Kwangseok ; Kim, Ilgweon ; Shin, Hyungcheol
Author_Institution
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fYear
1999
fDate
1999
Firstpage
233
Lastpage
236
Abstract
The nano-crystal memory operates at low voltage compared to conventional flash memory due to thinner tunneling dielectrics since the spacing between the Si dots suppresses the charge loss through lateral paths. Recently, p-channel nano-crystal memory, which stores holes instead of electrons as the information, has been reported to have good characteristics compared with EEPROM. In this paper, the characteristics of tunneling oxide and tunneling ON is compared for p-channel nano-crystal memory
Keywords
dielectric thin films; nanotechnology; semiconductor storage; tunnelling; Si; charge loss; hole storage; p-channel nano-crystal memory; tunneling ON; tunneling dielectrics; tunneling oxide; Dielectric losses; Dielectric substrates; Electrons; Equations; Hysteresis; Low voltage; Nanoscale devices; Silicon; Threshold voltage; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location
Seoul
Print_ISBN
0-7803-5727-2
Type
conf
DOI
10.1109/ICVC.1999.820889
Filename
820889
Link To Document