Title :
The effects of post annealing on oxide-charge-to-breakdown and interface state in tungsten polycide gate
Author :
Lee, Byunghak ; Kim, Sangcheol ; Kim, Dongchan ; Kim, Taewoo ; Park, Jungyeol ; Choe, Youngho ; Woo, Youngtag ; Euikyu Ryou ; Jongoh Kim ; Om, Jaechul
Author_Institution :
Memory R&D Div., Hyundai Electron. Ind. Co. Ltd., Ichon, South Korea
Abstract :
The dependence of oxide charge-to-breakdown (QBD) and device degradation on the combined post annealing of RTA and FA in the tungsten polycide gate technology have been experimentally investigated. The experimental results suggest that QBD and degradation are improved by lower temperature and shorter time of RTA. Whereas the FA/RTA annealing sequence is more advantageous for improving QBD , the RTA/FA annealing sequence is good for improving device degradation
Keywords :
MOS capacitors; MOSFET; annealing; interface states; rapid thermal annealing; semiconductor device breakdown; semiconductor device metallisation; semiconductor device reliability; tungsten compounds; MOS capacitor; MOSFET; RTA; SiO2-Si; WSi; WSix polycide gate technology; annealing sequence; device degradation; furnace annealing; interface state; oxide reliability; oxide-charge-to-breakdown; post annealing; Degradation; Design for quality; Doping; Interface states; MOSFETs; Rapid thermal annealing; Stress; Temperature; Thermal resistance; Tungsten;
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
DOI :
10.1109/ICVC.1999.820892
