DocumentCode
3529550
Title
A novel cell charge evaluation scheme and test method for 4 Mb nonvolatile ferroelectric RAM
Author
Jeon, Byung-Gil ; Choi, Moon-Kyu ; Oh, Seung-Gyu ; Chung, Yeonbae ; Suh, Kang-Deog ; Kim, Kinam
Author_Institution
Memory Product & Technol. Div., Samsung Electron. Co. Ltd., Yongin, South Korea
fYear
1999
fDate
1999
Firstpage
281
Lastpage
284
Abstract
This paper proposes a novel method to evaluate the real cell ferroelectric capacitor with 4 Mb nonvolatile ferroelectric RAM which has a Cell Charge Evaluation Scheme (CCES). The charge value and the distribution of the memory cell ferroelectric capacitor can be evaluated by the CCES. Additionally, it can easily screen out weak bits which have smaller charges than normal cells by using the CCES as a bit-line reference voltage generator
Keywords
charge measurement; ferroelectric capacitors; ferroelectric storage; integrated circuit testing; random-access storage; 4 Mbit; bit-line reference voltage generator; cell charge evaluation scheme; nonvolatile ferroelectric RAM; real cell ferroelectric capacitor; test method; weak bit screening; Capacitors; Electronic equipment testing; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Polarization; Pulse measurements; Random access memory; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location
Seoul
Print_ISBN
0-7803-5727-2
Type
conf
DOI
10.1109/ICVC.1999.820905
Filename
820905
Link To Document