Title :
A novel cell charge evaluation scheme and test method for 4 Mb nonvolatile ferroelectric RAM
Author :
Jeon, Byung-Gil ; Choi, Moon-Kyu ; Oh, Seung-Gyu ; Chung, Yeonbae ; Suh, Kang-Deog ; Kim, Kinam
Author_Institution :
Memory Product & Technol. Div., Samsung Electron. Co. Ltd., Yongin, South Korea
Abstract :
This paper proposes a novel method to evaluate the real cell ferroelectric capacitor with 4 Mb nonvolatile ferroelectric RAM which has a Cell Charge Evaluation Scheme (CCES). The charge value and the distribution of the memory cell ferroelectric capacitor can be evaluated by the CCES. Additionally, it can easily screen out weak bits which have smaller charges than normal cells by using the CCES as a bit-line reference voltage generator
Keywords :
charge measurement; ferroelectric capacitors; ferroelectric storage; integrated circuit testing; random-access storage; 4 Mbit; bit-line reference voltage generator; cell charge evaluation scheme; nonvolatile ferroelectric RAM; real cell ferroelectric capacitor; test method; weak bit screening; Capacitors; Electronic equipment testing; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Polarization; Pulse measurements; Random access memory; Switches; Voltage;
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
DOI :
10.1109/ICVC.1999.820905
