Thermal stability in CoFe/Os/OsMn films

Author

Peng, T.Y. ; Lo, C.K. ; Yao, Y.D. ; Tien, D.C. ; Chen, S.-Y.

Author_Institution

Dept. of Mater. Sci., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2005

fDate

4-8 April 2005

Firstpage

361

Lastpage

362

Abstract

A simple structure of Ta/CoFe/Os(d)/OsMn is deposited by HV sputtering system, where d varies from 0 to 2 nm. After deposition, all samples are subjected to magnetic field annealing at 1 kOe and at different temperatures for 30 minutes. No diffusion evidence is found from the Auger electron spectroscopy depth profile and magneto-optical Kerr effect measurements for samples with d=1 and 2 nm annealed below 300°C. This result suggests that the inserted osmium layer prevents Mn diffusion into the magnetic CoFe layer.

Keywords

Auger electron spectra; Kerr magneto-optical effect; antiferromagnetic materials; cobalt alloys; coercive force; ferromagnetic materials; iron alloys; magnetic annealing; magnetic multilayers; magnetic thin films; manganese alloys; osmium; osmium alloys; surface diffusion; tantalum; thermal stability; 1 nm; 2 nm; 30 min; Auger electron spectroscopy depth profile; HV sputtering system; Ta-CoFe-Os-OsMn; deposition; diffusion; magnetic field annealing; magneto-optical Kerr effect measurements; osmium layer; thermal stability; Annealing; Electrons; Kerr effect; Magnetic field measurement; Magnetic films; Magnetooptic effects; Spectroscopy; Sputtering; Temperature; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1463609

Filename

1463609