DocumentCode :
3529871
Title :
Micromachined layered thin film magnetoimpedance element
Author :
Yamadera, H. ; Nishibe, Y. ; Ohta, N. ; Tsukada, A. ; Sugitani, N.
Author_Institution :
Toyota Central Res. & Dev. Lab., Inc., Aichi, Japan
fYear :
2005
fDate :
4-8 April 2005
Firstpage :
393
Lastpage :
394
Abstract :
This paper presents a micromachined layered magnetoimpedance (MI) element consisting of a CoNbZr/Al/CoNbZr film and its MI properties were investigated. Sensitivity defined as maximum fractional change in impedance changed with thickness and dimension. The values for which MI element had the best properties were 45% for the sensitivity, 5% for the fractional change in impedance dependent on temperature. These values were much better than those of integrated magnetoresistance (MR) sensors. Therefore, these micromachined elements have great potential use in integrated magnetic sensors.
Keywords :
aluminium alloys; cobalt alloys; magnetic fields; magnetic sensors; magnetic thin films; magnetoresistance; micromachining; niobium alloys; zirconium alloys; CoNbZr-Al; fractional change; impedance; integrated magnetic sensors; integrated magnetoresistance sensors; magnetic field sensitivity; micromachined layered magnetoimpedance element; Amorphous magnetic materials; Impedance; Magnetic anisotropy; Magnetic field measurement; Magnetic films; Magnetic properties; Magnetic sensors; Magnetostriction; Perpendicular magnetic anisotropy; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
Type :
conf
DOI :
10.1109/INTMAG.2005.1463625
Filename :
1463625
Link To Document :
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