DocumentCode
352988
Title
RF W-band wafer-to-wafer transition
Author
Herrick, K.J. ; Katehi, L.P.B.
Author_Institution
Radiat. Lab., Michigan Univ., Ann Arbor, MI, USA
Volume
1
fYear
2000
fDate
11-16 June 2000
Firstpage
73
Abstract
Multiwafer silicon designs must provide an avenue for electrical signals to flow from wafer to wafer. For this purpose, a two-layer electrical bond is proposed to provide electrical connection between two coplanar waveguides on vertically stacked silicon wafers. Loss of approximately 0.1 dB is measured for this compact, packaged transition at W-band.
Keywords
MIMIC; coplanar waveguides; integrated circuit interconnections; integrated circuit packaging; wafer bonding; 0.1 dB; W-band; coplanar waveguides; electrical connection; electrical signals; multiwafer designs; packaged transition; two-layer electrical bond; vertically stacked wafers; wafer-to-wafer transition; Circuits; Conductivity; Fabrication; Gold; Impedance; Insertion loss; Radio frequency; Silicon; Temperature; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-7803-5687-X
Type
conf
DOI
10.1109/MWSYM.2000.860888
Filename
860888
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