Characterization of source-to-drain capacitance (C/sub ds/) effect of GaAs PHEMT for millimeter wave switch

Author

Younkyu Chung ; Gi-Hyon Ryu ; Dae-Hyun Kim ; Jae-Hak Lee ; Woo-Yeon Hong ; Kwang-Seok Seo

Author_Institution

Sch. of Electr. Eng. & Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., South Korea

Volume

1

fYear

2000

fDate

11-16 June 2000

Firstpage

173

Abstract

This paper represents the device parameter influence of GaAs PHEMT with different gate lengths on switching performance and its application in DC-50GHz wide-band SPST monolithic switch ICs. From the characteristic of GaAs PHEMT and monolithic switch, especially, it is proved experimentally that source-to-drain capacitance dependent on gate length is a very important characteristic for improving the isolation performance of GaAs PHEMT switch at high-impedance state.

Keywords

III-V semiconductors; capacitance; field effect transistor switches; gallium arsenide; high electron mobility transistors; microwave switches; millimetre wave field effect transistors; 50 GHz; GaAs; PHEMT; gate lengths; high-impedance state; millimeter wave switch; source-to-drain capacitance; switching performance; wideband SPST monolithic switch ICs; Capacitance; Communication switching; Equivalent circuits; Gallium arsenide; HEMTs; MODFETs; Microwave devices; PHEMTs; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.860926

Filename

860926