Title :
Fabrication of high frequency passives on BiCMOS silicon substrates
Author :
Volant, R. ; Groves, R. ; Malinowski, J. ; Subbanna, S. ; Begle, E. ; Laney, D. ; Larson, L. ; Sakamoto, G. ; Chan, P.
Author_Institution :
IBM Microelectron., Hopewell Junction, NY, USA
Abstract :
We describe a manufacturable process for the fabrication of microwave passive circuits on a high loss silicon substrate. This process, known as "Topside" allows for the fabrication of high frequency microwave transmission lines and inductors over the typical final metal layer of an integrated circuit. This process has been implemented on 200 mm (8 inch) silicon wafers with SiGe HBT\´s and CMOS devices. We describe for the first time the process details, as well as microstrip data on different thicknesses of metal.
Keywords :
BiCMOS integrated circuits; MMIC; Q-factor; UHF integrated circuits; elemental semiconductors; inductors; integrated circuit manufacture; passive networks; silicon; substrates; CMOS devices; HF inductors; HF microwave transmission lines; HF passive component fabrication; Si; Si BiCMOS substrates; SiGe; SiGe HBT; Topside process; high frequency passives; high loss Si substrate; manufacturable process; microwave passive circuits; microwave passives; BiCMOS integrated circuits; Distributed parameter circuits; Fabrication; Frequency; Inductors; Manufacturing processes; Microwave devices; Microwave integrated circuits; Passive circuits; Silicon;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.860944
