DocumentCode :
3530202
Title :
Temperature dependent actuation voltage for longer MEMS switch lifetime
Author :
Lai, C.H. ; Wong, W.S.H.
Author_Institution :
Sch. of Eng. & Sci., Swinburne Univ. of Technol., Kuching, Malaysia
fYear :
2010
fDate :
3-4 Aug. 2010
Firstpage :
43
Lastpage :
48
Abstract :
A temperature dependent actuation voltage has been proposed to minimize the dielectric charging effect in micro-electromechanical system (MEMS) switch, leading to an improved switch lifetime. Mathematical models have been utilized to model the pull-in voltage variation throughout a range of thermal condition and simulate dielectric charging in the RF MEMS switch, enabling the analysis of charge built-up at the switch dielectric layer and substrate at different ambient temperature condition. The proposed temperature dependent actuation voltage has shown to reduce the dielectric charging effect of the RF MEMS switch as it minimize the applied actuation voltage to the MEMS switch during its long continuous operation.
Keywords :
microswitches; MEMS switch lifetime; RF MEMS switch; dielectric charging; mathematical models; microelectromechanical system switch; pull-in voltage variation; temperature dependent actuation voltage; thermal condition; Analytical models; Dielectric substrates; Mathematical model; Microelectromechanical systems; Micromechanical devices; Microswitches; Radiofrequency microelectromechanical systems; Switches; Temperature dependence; Voltage; Micro-electromechanical system (MEMS); Radio frequency (RF); Temperature; charging; dielectric; lifetime; reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ASQED), 2010 2nd Asia Symposium on
Conference_Location :
Penang
Print_ISBN :
978-1-4244-7809-5
Type :
conf
DOI :
10.1109/ASQED.2010.5548159
Filename :
5548159
Link To Document :
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