Title :
Extrinsic leakage current on InP/InGaAs DHBTs
Author :
Martin, J.-C. ; Maneux, C. ; Labat, N. ; Touboul, A. ; Riet, M. ; Blayac, S. ; Kahn, M. ; Godin, J.
Author_Institution :
Bordeaux I Univ., Talence, France
Abstract :
This paper presents results of aging tests obtained on InP/InGaAs HBT on InP substrate and associated test structures. An extrinsic current path between measurement pads is shown to be responsible for HBT leakage current evolution. No aging mechanism located in the intrinsic device has been observed either after 500 hours under 180°C stress temperature nor after 100 hours under 250°C stress temperature.
Keywords :
III-V semiconductors; ageing; gallium arsenide; heterojunction bipolar transistors; indium compounds; leakage currents; semiconductor device measurement; semiconductor device testing; 100 hour; 180 C; 250 degC; 500 h; InP-InGaAs; InP/InGaAs DHBTs; aging tests; extrinsic leakage current; Aging; Current measurement; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Leakage current; Stress; Temperature; Testing;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205301
