Importance of velocity modulation: analysis and experimental verification

Author

Willén, Bo ; Rohner, Marcel

Author_Institution

IMIT, R. Inst. of Technol., Kista, Sweden

fYear

2003

fDate

12-16 May 2003

Firstpage

16

Lastpage

21

Abstract

Velocity modulation, i.e. current dependent electron mobility, is claimed to be essential for the HF-potential of InP-HBTs in that it significantly reduces charge storage effects of the collector. The reduction is related to operation in base pushout, and high-speed InP-HBTs are regularly operated in this mode to obtain optimum performance. As a consequence, dynamic effects of base pushout may cause a resonance in the unilateral power gain for advanced devices, by that obstructing estimation of the maximum frequency of oscillation.

Keywords

III-V semiconductors; electron mobility; heterojunction bipolar transistors; indium compounds; HF-potential; InP; InP-HBTs; base pushout; charge storage effects; current dependent electron mobility; dynamic effects; maximum frequency of oscillation; optimum performance; unilateral power gain; velocity modulation; Capacitance; Current density; Cutoff frequency; Delay estimation; Electron mobility; Frequency estimation; Indium gallium arsenide; Resonance; Silicon; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205302

Filename

1205302