DocumentCode :
3530290
Title :
High luminance FED
Author :
Nagao, M. ; Yoshida, T. ; Nakamura, K. ; Marushima, Y. ; Taniguchi, M. ; Itoh, S. ; Kanemaru, S.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
fYear :
2009
fDate :
20-24 July 2009
Firstpage :
55
Lastpage :
56
Abstract :
This paper discusses the prototype of a TFT-controlled high-luminance FED was fabricated. High luminance operation is demonstrated even at low anode voltage that is due to the built-in memory function. Ultra-high luminance operation is expected at a higher anode voltage.
Keywords :
brightness; field emission displays; anode voltage; field emission displays; high-luminance FED; Anodes; Circuits; Flat panel displays; Liquid crystal displays; Organic light emitting diodes; Prototypes; Space vector pulse width modulation; Thin film transistors; Timing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location :
Shizuoka
Print_ISBN :
978-1-4244-3587-6
Electronic_ISBN :
978-1-4244-3588-3
Type :
conf
DOI :
10.1109/IVNC.2009.5271840
Filename :
5271840
Link To Document :
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