Illumination effects on the characteristics of nanocrystalline silicon ballistic emitter as an active electrode in solutions

Author

Ohta, Toshiyuki ; Ogawa, Shuichiro ; Gelloz, Bernard ; Koshida, Nobuyoshi

Author_Institution

Grad. Sch. of Eng., Tokyo Univ. of Agric. & Technol., Koganei, Japan

fYear

2009

fDate

20-24 July 2009

Firstpage

85

Lastpage

86

Abstract

As reported previously, the nanocrystalline silicon (nc-Si) ballistic electron emitter shows some specific features: emission of high energy electrons with several eV in average, surface emission, small angle dispersion, operation in various medium, including vacuum, atmospheric-pressure gases, and solutions. When the emitter is driven in aqueous solutions without using any counter electrode, hydrogen is generated at the device surface. The present paper reports the effects of illumination on the activity of the nc-Si ballistic emitters in solutions. The experimental results of the operation in D₂O solutions are also presented.

Keywords

electrodes; electron emission; elemental semiconductors; lighting; nanostructured materials; silicon; Si; active electrode; atmospheric-pressure gases; electron emission; illumination effects; nanocrystalline silicon ballistic emitter; small angle dispersion; surface emission; Agricultural engineering; Annealing; Counting circuits; Electrodes; Electron emission; Electron guns; Hydrogen; Lighting; Silicon; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International

Conference_Location

Shizuoka

Print_ISBN

978-1-4244-3587-6

Electronic_ISBN

978-1-4244-3588-3

Type

conf

DOI

10.1109/IVNC.2009.5271846

Filename

5271846