Title :
Illumination effects on the characteristics of nanocrystalline silicon ballistic emitter as an active electrode in solutions
Author :
Ohta, Toshiyuki ; Ogawa, Shuichiro ; Gelloz, Bernard ; Koshida, Nobuyoshi
Author_Institution :
Grad. Sch. of Eng., Tokyo Univ. of Agric. & Technol., Koganei, Japan
Abstract :
As reported previously, the nanocrystalline silicon (nc-Si) ballistic electron emitter shows some specific features: emission of high energy electrons with several eV in average, surface emission, small angle dispersion, operation in various medium, including vacuum, atmospheric-pressure gases, and solutions. When the emitter is driven in aqueous solutions without using any counter electrode, hydrogen is generated at the device surface. The present paper reports the effects of illumination on the activity of the nc-Si ballistic emitters in solutions. The experimental results of the operation in D2O solutions are also presented.
Keywords :
electrodes; electron emission; elemental semiconductors; lighting; nanostructured materials; silicon; Si; active electrode; atmospheric-pressure gases; electron emission; illumination effects; nanocrystalline silicon ballistic emitter; small angle dispersion; surface emission; Agricultural engineering; Annealing; Counting circuits; Electrodes; Electron emission; Electron guns; Hydrogen; Lighting; Silicon; Surface treatment;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2009. IVNC 2009. 22nd International
Conference_Location :
Shizuoka
Print_ISBN :
978-1-4244-3587-6
Electronic_ISBN :
978-1-4244-3588-3
DOI :
10.1109/IVNC.2009.5271846
