SiGe bipolar technologies for low phase noise RF and microwave applications

Author

Regis, M. ; Borgarino, M. ; Bary, L. ; Llopis, O. ; Graffeuil, J. ; Gruhle, A. ; Kovacic, S. ; Plana, R.

Author_Institution

Lab. d´Autom. et d´Anal. des Syst., CNRS, Toulouse, France

Volume

1

fYear

2000

fDate

11-16 June 2000

Firstpage

261

Abstract

This paper presents an overview of the low frequency noise performances of both "abrupt" and "gradual" SiGe HBTs. We demonstrated that when an appropriate device is used, a 1/f corner noise frequency of 1 kHz is obtained. We further presented a correlation with phase noise performances which outperform those reported for III-V devices.

Keywords

1/f noise; Ge-Si alloys; UHF bipolar transistors; heterojunction bipolar transistors; microwave bipolar transistors; phase noise; semiconductor device models; semiconductor device noise; semiconductor materials; 1/f corner noise frequency; LF noise performances; SiGe; SiGe bipolar technologies; abrupt SiGe HBTs; gradual SiGe HBTs; low phase noise RF applications; low phase noise microwave applications; phase noise performance; Active noise reduction; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Microwave devices; Microwave technology; Noise figure; Phase noise; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.860969

Filename

860969