DocumentCode
3530425
Title
InP photonic crystal membrane structures
Author
Hu, E.L. ; Xing, A. ; Davanco, M. ; Reese, C. ; Blumenthal, D.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear
2003
fDate
12-16 May 2003
Firstpage
69
Lastpage
73
Abstract
Quasi-2-dimensional photonic band gap waveguides have been etched onto InGaAsP membranes. A variety of structures were formed, with differing lattice constants and fill factors. Transmission measurements through these structures allowed mapping out of the band gap and band edge of the photonic crystal structures. Comparisons between experimental measurements and theoretical simulations allowed us to determine the sensitivity of optical output to fabrication errors and variations.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical waveguides; photonic band gap; photonic crystals; InGaAsP; InGaAsP membranes; InP; InP photonic crystal membrane structures; etching; fill factors; lattice constants; quasi-2-dimensional photonic band gap waveguides; Biomembranes; Etching; Indium phosphide; Lattices; Optical device fabrication; Optical sensors; Optical waveguides; Photonic band gap; Photonic crystals; Waveguide discontinuities;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN
0-7803-7704-4
Type
conf
DOI
10.1109/ICIPRM.2003.1205314
Filename
1205314
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