Title :
High tunnel magnetoresistance in epitaxial Co2Cr0.6Fe0.4Al/MgO/CoFe tunnel junctions
Author :
Marukame, Takao ; Kasahara, Takashi ; Matsuda, Keisuke ; Uemura, Tetsuya Uemura ; Yamamoto, Masafumi
Author_Institution :
Div. of Electron. for Informatics, Hokkaido Univ., Sapporo, Japan
Abstract :
Epitaxial magnetic tunnel junctions (MTJ) using a Co-based full-Heusler alloy along with a MgO tunnel barrier were fabricated successfully using rf magnetron sputtering and electron gun deposition. The fabricated epitaxial MTJ layer structure was as follows: MgO buffer layer/Co2Cr0.6Fe0.4Al lower electrode/MgO tunnel barrier/Co50Fe50 upper electrode, grown on a MgO(001) single-crystal substrate. High tunnel magnetoresistance (TMR) ratios of 42% at room temperature and 74% at 55 K were measured for the MTJs. These results confirm the promise of epitaxial MTJs using Co-based Heusler alloys as a key device structure.
Keywords :
aluminium alloys; buffer layers; chromium alloys; cobalt alloys; electrodes; interface structure; iron alloys; magnetic epitaxial layers; sputtered coatings; tunnelling magnetoresistance; 293 to 298 K; 55 K; Co2Cr0.6Fe0.4Al-MgO-Co50Fe50; Heusler alloy; MgO; buffer layer; electron gun deposition; epitaxial layer structure; magnetic tunnel junctions; rf magnetron sputtering; room temperature; single-crystal substrate; tunnel barrier; tunnel magnetoresistance; Buffer layers; Chromium; Electrodes; Electrons; Iron; Magnetic tunneling; Sputtering; Substrates; Temperature; Tunneling magnetoresistance;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1463663
