Title :
Fabrication aspects of InP-CAIBE processing for photonic crystal devices
Author :
Golka, S. ; Janiak, Klemens ; Hensel, H.J. ; Heidrich, H.
Author_Institution :
Fraunhofer Inst. fur Nachrichtentechnik, Heinrich-Hertz-Inst., Berlin, Germany
Abstract :
An improved Ar/Cl CAME process for the fabrication of InP-based Photonic Crystals (PhCs) is presented. Effects of temperature, ion beam, chlorine flow and other parameters are discussed. In particular feature size effects are investigated on a length scale of 200 to 400 nm required for the realization of infrared photonic band gaps. The potential of CAIBE for fabrication of deep and uniform hole patterns in InP is demonstrated. The good quality of the samples including multi quantum well InGaAsP/InP layers was demonstrated by performing transmission measurements by internal light source technique.
Keywords :
III-V semiconductors; indium compounds; photonic band gap; photonic crystals; sputter etching; 200 to 400 nm; Ar-Cl; CAIBE processing; InGaAsP-InP; InP; fabrication; feature size effects; infrared photonic band gaps; multi quantum well InGaAsP/InP layers; photonic crystal devices; temperature effects; Dry etching; Fabrication; Indium phosphide; Ion beams; Light sources; Optical scattering; Performance evaluation; Photonic crystals; Resists; Silicon compounds;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205315
