DocumentCode
3530491
Title
Magnetoresistance in magnetic tunnel junctions with amorphous electrodes
Author
Nakajima, K. ; Fen, G. ; Coey, J.M.D.
Author_Institution
Phys. Dept., Trinity Coll., Dublin, Ireland
fYear
2005
fDate
4-8 April 2005
Firstpage
477
Lastpage
478
Abstract
Two different types of amorphous material, which includes CoFeB and Co2MnSi alloy were examined for use as electrodes in magnetic tunnel junctions (MTJ) to achieve a high tunnel magnetoresistance (TMR) ratio. Films were grown in a Shamrock tool by dc magnetron cosputtering from elemental targets on glass substrates or thermal-oxidized Si substrates. Film compositions were checked by energy dispersive X-ray analysis in a scanning electron microscope. Structural, and magnetic characterization was performed by X-ray diffraction and in a %T superconducting quantum interference device (SQUID) magnetometer, respectively. In the amorphous MTJs, the tunneling spin-polarization does not reflect the magnitude of the net magnetic moment directly.
Keywords
X-ray chemical analysis; X-ray diffraction; amorphous magnetic materials; boron alloys; cobalt alloys; electrodes; electron spin polarisation; interface structure; iron alloys; magnetic moments; magnetic multilayers; magnetic thin films; manganese alloys; oxidation; scanning electron microscopy; silicon alloys; sputtered coatings; tunnelling magnetoresistance; SQUID magnetometer; Shamrock tool; Si substrates; Si-SiO2-Ta-Co2MnSi-AlOx-Co-IrMn-Ta; Si-SiO2-Ta-Co90Fe10Bx-AlOx-Co90Fe10Bx-IrMn-Ta; SiO; X-ray diffraction; amorphous electrodes; dc magnetron cosputtering; energy dispersive X-ray analysis; film composition; glass substrates; magnetic moment; magnetic tunnel junctions; scanning electron microscope; superconducting quantum interference device; thermal oxidation; tunnel magnetoresistance ratio; tunneling spin polarization; Amorphous magnetic materials; Amorphous materials; Electrodes; Magnetic films; Magnetic tunneling; SQUIDs; Substrates; Superconducting films; Superconducting magnets; Tunneling magnetoresistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN
0-7803-9009-1
Type
conf
DOI
10.1109/INTMAG.2005.1463667
Filename
1463667
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