Title :
Multilevel finite ground coplanar line transitions for high-density packaging using silicon micromachining
Author :
Becker, J.P. ; Katehi, L.P.B.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
A 3D photolithographic technique is exploited to produce finite ground coplanar (FGC) transmission lines that transition into and out of silicon micromachined cavities. Each transition was found to introduce an average loss of less than 0.08 dB across the 2-40 GHz range for a cavity depth of 110 /spl mu/m. The demonstration of this technology is a significant step toward fully realizing the circuit packaging capabilities of micromachined silicon and offers the possibility of novel, broadband vertical transitions.
Keywords :
MIMIC; MMIC; coplanar transmission lines; elemental semiconductors; integrated circuit packaging; micromachining; photolithography; silicon; 110 micron; 2 to 40 GHz; 3D photolithographic technique; Si; average loss; broadband vertical transitions; cavity depth; circuit packaging capabilities; high-density packaging; micromachined cavities; micromachining; multilevel finite ground coplanar line transitions; Chemicals; Costs; Electromagnetic heating; Fabrication; Flexible printed circuits; Micromachining; Microwave circuits; Packaging; Resists; Silicon;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.860991
