• DocumentCode
    3530538
  • Title

    Pure luminescence transitions from a small InAs/GaAs quantum dot exhibiting a single electron level

  • Author

    Karlsson, K.F. ; Holtz, P.O. ; Moskalenko, E.S. ; Monemar, B. ; Schoenfeld, W.V. ; Garcia, J.M. ; Petroff, P.M.

  • Author_Institution
    Dept. of Phys., Linkoping Univ., Sweden
  • fYear
    2003
  • fDate
    12-16 May 2003
  • Firstpage
    100
  • Lastpage
    101
  • Abstract
    Pure photoluminescence spectra originating from a single InAs/GaAs quantum dot, which is small enough to possess only one single-electron level, are demonstrated. A symmetric fine structure of the exciton and the biexciton is observed.
  • Keywords
    III-V semiconductors; biexcitons; excitons; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum dots; InAs-GaAs; InAs/GaAs quantum dot; biexciton; exciton; photoluminescence spectra; single electron level; Charge carrier processes; Electrons; Energy states; Excitons; Gallium arsenide; Luminescence; Photoluminescence; Quantum dots; Spontaneous emission; US Department of Transportation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2003. International Conference on
  • Print_ISBN
    0-7803-7704-4
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2003.1205322
  • Filename
    1205322
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3530538