Title :
Reliability of InGaAs/InP HBTs with InP passivation structure
Author :
Yamabi, Ryuji ; Kotani, Kenji ; Kawasaki, Takeshi ; Yanagisawa, Masak ; Yaegassi, Seiji ; Yano, Hiroshi
Author_Institution :
Optoelectronics R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan
Abstract :
We have fabricated InGaAs/InP HBTs with an InP passivation structure and characterized reliability. Life tests of the HBTs under a collector current density of 100 kA/cm2 were carried out at junction temperatures of 255°C and 280°C. The HBTs have shown a low emitter-base current and stable characteristics in the life tests compared with HBTs without the InP passivation structure. The variations of current gain and turn-on voltage at a collector current density of 100 kA/cm2 are within -7% and -1%, respectively, after 4,411 hours in the life test of 255°C. We have obtained the activation energy of 1.5 eV and the mean time to failure of 5 × 106 hours at a junction temperature of 150°C, which is sufficient for practical applications.
Keywords :
III-V semiconductors; current density; gallium arsenide; heterojunction bipolar transistors; indium compounds; passivation; semiconductor device reliability; 1.5 eV; 150 degC; 255 C; 280 degC; 4411 h; 5×106 h; InGaAs-InP; InGaAs/InP HBTs; InP passivation structure; activation energy; collector current density; current gain; life tests; low emitter-base current; reliability; turn-on voltage; Carbon dioxide; Current density; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Leakage current; Life testing; Passivation; Thermal stresses; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205328
