Reliability of InGaAs/InP HBTs with InP passivation structure

Author

Yamabi, Ryuji ; Kotani, Kenji ; Kawasaki, Takeshi ; Yanagisawa, Masak ; Yaegassi, Seiji ; Yano, Hiroshi

Author_Institution

Optoelectronics R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan

fYear

2003

fDate

12-16 May 2003

Firstpage

122

Lastpage

125

Abstract

We have fabricated InGaAs/InP HBTs with an InP passivation structure and characterized reliability. Life tests of the HBTs under a collector current density of 100 kA/cm² were carried out at junction temperatures of 255°C and 280°C. The HBTs have shown a low emitter-base current and stable characteristics in the life tests compared with HBTs without the InP passivation structure. The variations of current gain and turn-on voltage at a collector current density of 100 kA/cm² are within -7% and -1%, respectively, after 4,411 hours in the life test of 255°C. We have obtained the activation energy of 1.5 eV and the mean time to failure of 5 × 10⁶ hours at a junction temperature of 150°C, which is sufficient for practical applications.

Keywords

III-V semiconductors; current density; gallium arsenide; heterojunction bipolar transistors; indium compounds; passivation; semiconductor device reliability; 1.5 eV; 150 degC; 255 C; 280 degC; 4411 h; 5×10⁶ h; InGaAs-InP; InGaAs/InP HBTs; InP passivation structure; activation energy; collector current density; current gain; life tests; low emitter-base current; reliability; turn-on voltage; Carbon dioxide; Current density; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Leakage current; Life testing; Passivation; Thermal stresses; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205328

Filename

1205328