High current gain InP/InGaAs heterojunction bipolar transistor with a low resistance compositionally graded base structure

Author

Ouchi, K. ; Ohta, H. ; Kudo, M. ; Mishima, T.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

2003

fDate

12-16 May 2003

Firstpage

126

Lastpage

129

Abstract

To improve high-frequency performance of InP/InGaAs HBTs for the application to 40-Gb/s telecommunication system, the reduction of resistance of carbon-doped InGaAs base was examined by using compositionally uniform and graded base structures grown by gas-source MBE. The dependence of the current gain on the base sheet resistance for the various base structures suggested that a thick graded structure can reduce base resistance. In particular an 80-nm-thick graded base HBT with an extremely low base sheet resistance of 285 Ω/sq produced a practically useful current gain of 23 and a high cut-off frequency (f_T) of 139 GHz.

Keywords

III-V semiconductors; carrier density; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor growth; 139 GHz; 40-Gb/s telecommunication system; 80 nm; InP-InGaAs; base sheet resistance; compositionally uniform base structures; gas-source M13E; graded base structures; high current gain InP/InGaAs heterojunction bipolar transistor; low resistance compositionally graded base structure; Bipolar transistors; Doping; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laboratories; Molecular beam epitaxial growth; Optical transmitters; Performance gain; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205329

Filename

1205329