Low-frequency noise characterization of metamorphic InP/InGaAs heterojunction bipolar transistors on GaAs substrate

Author

Yang, Hong ; Hong Wang ; Radhakrishnan, K.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2003

fDate

12-16 May 2003

Firstpage

142

Lastpage

144

Abstract

Low frequency (LF) noise characteristics of MHBTs in the frequency range of 1 Hz to 20 kHz are reported. The LF noise spectra of metamorphic heterojunction bipolar transistor (MHBT) exhibit only 1/f noise with no visible Lorentzains. The 1/f noise level of MHBTs is comparable to the one obtained for the referenced InP lattice-matched HBTs (LHBTs) suggesting that MHBT structures with good material quality could be achieved by the optimization of MBE material growth.

Keywords

1/f noise; III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor device noise; 1 Hz to 20 kHz; 1/f noise; GaAs substrate; InP-InGaAs; MBE material growth; low-frequency noise characterization; metamorphic InP/InGaAs heterojunction bipolar transistors; Buffer layers; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Low-frequency noise; Noise level; Noise measurement; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205333

Filename

1205333