Title :
Low-frequency noise characterization of metamorphic InP/InGaAs heterojunction bipolar transistors on GaAs substrate
Author :
Yang, Hong ; Hong Wang ; Radhakrishnan, K.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
Low frequency (LF) noise characteristics of MHBTs in the frequency range of 1 Hz to 20 kHz are reported. The LF noise spectra of metamorphic heterojunction bipolar transistor (MHBT) exhibit only 1/f noise with no visible Lorentzains. The 1/f noise level of MHBTs is comparable to the one obtained for the referenced InP lattice-matched HBTs (LHBTs) suggesting that MHBT structures with good material quality could be achieved by the optimization of MBE material growth.
Keywords :
1/f noise; III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor device noise; 1 Hz to 20 kHz; 1/f noise; GaAs substrate; InP-InGaAs; MBE material growth; low-frequency noise characterization; metamorphic InP/InGaAs heterojunction bipolar transistors; Buffer layers; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Low-frequency noise; Noise level; Noise measurement; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205333
