A global finite difference time domain analysis of a silicon nonlinear transmission line

Author

Thiel, W. ; Birk, M. ; Menzel, W. ; Abele, P.

Author_Institution

Dept. of Microwave Tech., Ulm Univ., Germany

Volume

1

fYear

2000

fDate

11-16 June 2000

Firstpage

371

Abstract

This paper presents a global finite difference time domain (FDTD) analysis of a silicon nonlinear transmission line (NLTL) using optimized varactors. The simulation is based on the FDTD method also including transmission line losses and the drift-diffusion model for the semiconductor devices solved by means of finite differences (FD). The diodes are included in the FDTD scheme as lumped elements. The fall time of 74 ps of a 4 GHz sinewave was compressed to approximately 15 ps at the output of a 20 mm long NLTL with 40 diodes. Comparing the measured output signal to the simulation, a good agreement could be achieved.

Keywords

MMIC; coplanar transmission lines; elemental semiconductors; finite difference time-domain analysis; integrated circuit modelling; silicon; varactors; 20 mm; 4 GHz; 74 ps; Si; coplanar lines; drift-diffusion model; global finite difference time domain analysis; lumped elements; measured output signal; nonlinear transmission line; optimized varactors; transmission line losses; Circuit simulation; Distributed parameter circuits; Finite difference methods; Impedance; Propagation losses; Semiconductor diodes; Semiconductor process modeling; Silicon; Time domain analysis; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.861023

Filename

861023