Title :
Reliability investigations of 1.55 μm bulk semiconductor optical amplifier using functional parameter measurements
Author :
Huyghe, S. ; Béchou, L. ; Danto, Y. ; Laffitte, D. ; Boddaert, X. ; Volto, P. ; Denolle, A. ; Coquelin, A. ; Ollivier, C. ; Keller, D. ; Porcheron, C. ; Crottini, A. ; Squedin, S. ; Renaud, M.
Author_Institution :
Lab. IXL, Bordeaux I Univ., Talence, France
Abstract :
We report results of ageing tests (270 mA, 100°C) applied to 1.55 μm Semiconductor Optical Amplifier (SOA) of 500 μm length active region for reliability investigations and show the strong relationship between functional parameters and their drifts versus ageing time.
Keywords :
III-V semiconductors; ageing; gallium arsenide; indium compounds; semiconductor device reliability; semiconductor optical amplifiers; 1.55 μm bulk semiconductor optical amplifier; 1.55 mm; 100 degC; 270 mA; 500 μm length active region; 500 mm; InP-InGaAs; functional parameter measurements; reliability; Aging; Optical devices; Optical mixing; Optical waveguides; Optical wavelength conversion; Qualifications; Semiconductor device reliability; Semiconductor optical amplifiers; Telecommunication network reliability; Testing;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205341
