Successively dry-wet etched InP microlens for bell shaped LED

Author

Jaeho Kim ; Kyoung Min Kim ; Jeon, Soo-Kun ; Kim, Moonjung ; Park, Eun-Hyun ; Kwon, Young-Se

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

fYear

2003

fDate

12-16 May 2003

Firstpage

175

Lastpage

177

Abstract

A method of fabricating monolithic InP microlenses, using successive dry-wet etching, is proposed. Dry etching is performed with reactive ion beam etching using Ar/Cl₂/H₂ gases. Wet etching with HBr/H₃PO₄/(0.5M) K₂Cr₂O₇ is used for successive wet etching. In the other fabrication methods of microlenses, microlens structures are limited by the characteristics of photoresist, polymer or etchants. More suitable lens structure can be achieved by our proposed method. We have fabricated InGaAsP/InP surface emitting BS-LEDs with the monolithic InP microlenses by this method. The Bell Shaped LED with this microlens shows improved coupling efficiency to fiber.

Keywords

III-V semiconductors; etching; gallium arsenide; indium compounds; light emitting diodes; microlenses; HBr-H₃PO₄-K₂Cr₂O₇; HBr/H₃PO₄/K₂Cr₂O₇; InGaAsP-InP; InGaAsP/InP surface emitting BS-LEDs; bell shaped LED; fabrication methods; reactive ion beam etching; successively dry-wet etched InP microlens; Argon; Chromium; Dry etching; Gases; Indium phosphide; Ion beams; Lenses; Light emitting diodes; Microoptics; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205342

Filename

1205342