DocumentCode
353081
Title
Low-power active mixer for Ku-band application using SiGe HBT MMIC technology
Author
Schad, K.B. ; Schumacher, H. ; Schuppen, A.
Author_Institution
Dept. of Electron. Devices & Circuits, Ulm Univ., Germany
Volume
1
fYear
2000
fDate
11-16 June 2000
Firstpage
397
Abstract
The authors demonstrate the application of a scaled commercially available SiGe heterojunction bipolar transistor monolithic integrated circuit technology to active mixers at Ku band. The realised Gilbert cell mixer circuits operate with less than 35 mW power consumption, and show a conversion gain above 8 dB and double sideband noise figures of 17 dB at 20 GHz.
Keywords
Ge-Si alloys; MMIC mixers; bipolar MMIC; heterojunction bipolar transistors; integrated circuit noise; low-power electronics; semiconductor materials; 17 dB; 20 GHz; 35 mW; Gilbert cell mixer; HBT MMIC technology; Ku-band application; SiGe; conversion gain; double sideband noise figures; low-power active mixer; power consumption; Capacitors; Circuit topology; Epitaxial growth; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; MMICs; Noise figure; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-7803-5687-X
Type
conf
DOI
10.1109/MWSYM.2000.861035
Filename
861035
Link To Document