DocumentCode :
353081
Title :
Low-power active mixer for Ku-band application using SiGe HBT MMIC technology
Author :
Schad, K.B. ; Schumacher, H. ; Schuppen, A.
Author_Institution :
Dept. of Electron. Devices & Circuits, Ulm Univ., Germany
Volume :
1
fYear :
2000
fDate :
11-16 June 2000
Firstpage :
397
Abstract :
The authors demonstrate the application of a scaled commercially available SiGe heterojunction bipolar transistor monolithic integrated circuit technology to active mixers at Ku band. The realised Gilbert cell mixer circuits operate with less than 35 mW power consumption, and show a conversion gain above 8 dB and double sideband noise figures of 17 dB at 20 GHz.
Keywords :
Ge-Si alloys; MMIC mixers; bipolar MMIC; heterojunction bipolar transistors; integrated circuit noise; low-power electronics; semiconductor materials; 17 dB; 20 GHz; 35 mW; Gilbert cell mixer; HBT MMIC technology; Ku-band application; SiGe; conversion gain; double sideband noise figures; low-power active mixer; power consumption; Capacitors; Circuit topology; Epitaxial growth; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; MMICs; Noise figure; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-5687-X
Type :
conf
DOI :
10.1109/MWSYM.2000.861035
Filename :
861035
Link To Document :
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