Title :
InAs/AlSb HFETs with fτ and fmax above 150 GHz for low-power MMICs
Author :
Bergman, J. ; Nagy, G. ; Sullivan, G. ; Brar, B. ; Kadow, C. ; Lin, H.-K. ; Gossard, A. ; Rodwell, M.
Author_Institution :
Rockwell Sci. Co., Thousand Oaks, CA, USA
Abstract :
Very low-power InAs/AlSb HFETs with excellent RF performance are reported. These metamorphic HFETs on GaAs substrates combine high microwave gm of at least 1.1 S/mm with low parasitic resistances to offer simultaneous measured fτ and fmax values of 160 GHz for both figures of merit. This performance is obtained at a drain bias voltage of only 0.35 V for an HFET with a 0.25-μm gate length. The high current gain (fτ) is attributable to the improved charge control due to scaling of the barrier thickness to 180 Å. The maximum power gain (fmax) depends on both gm and the HFET output conductance, which is fundamentally limited by the low breakdown voltage gap of the InAs channel (Eg = 0.36 eV).
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; indium compounds; low-power electronics; semiconductor device measurement; 0.25 micron; 0.35 V; 1.1 S/mm; 150 GHz; 180 Å; InAs-AlSb; InAs/AlSb HFETs; RF performance; barrier thickness; current gain; low breakdown voltage gap; low-power HFETs; low-power MMICs; maximum power gain; output conductance; parasitic resistance; Electric breakdown; Electrical resistance measurement; Electron mobility; Epitaxial layers; Gallium arsenide; HEMTs; MMICs; MODFETs; Radio frequency; Sheet materials;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205353
