Title :
Impact ionization in AlGaAsSb/InGaAs/GaAsSb metamorphic HEMTs
Author :
Webster, Richard T. ; Anwar, A.F.M. ; Heaton, John L. ; Nichols, Kirby ; Duncan, Scott
Author_Institution :
Air Force Res. Lab./SNHA, Hanscom AFB, MA, USA
Abstract :
We report the measurement of impact ionization induced gate current in AlGaAsSb/InGaAs/ AlGaAsSb metamorphic HEMT. These HEMTs are designed for high gain and low noise figure at millimeterwave frequencies by implementing high performance channel material, InGaAs with 80% indium, on GaAs substrates using a quaternary AlGaAsSb buffer and barrier. This structure improves the performance of millimeterwave transistors while retaining the low cost of established GaAs fabrication technologies by using the flexibility of metamorphic growth of III-V semiconductors.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device measurement; AlGaAsSb-InGaAs-GaAsSb; AlGaAsSb/InGaAs/GaAsSb metamorphic HEMT; III-V semiconductors; high gain; impact ionization; low noise figure; Current measurement; Gallium arsenide; HEMTs; III-V semiconductor materials; Impact ionization; Indium gallium arsenide; MODFETs; Noise figure; Performance gain; mHEMTs;
Conference_Titel :
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN :
0-7803-7704-4
DOI :
10.1109/ICIPRM.2003.1205357
