Impact ionization in AlGaAsSb/InGaAs/GaAsSb metamorphic HEMTs

Author

Webster, Richard T. ; Anwar, A.F.M. ; Heaton, John L. ; Nichols, Kirby ; Duncan, Scott

Author_Institution

Air Force Res. Lab./SNHA, Hanscom AFB, MA, USA

fYear

2003

fDate

12-16 May 2003

Firstpage

233

Lastpage

234

Abstract

We report the measurement of impact ionization induced gate current in AlGaAsSb/InGaAs/ AlGaAsSb metamorphic HEMT. These HEMTs are designed for high gain and low noise figure at millimeterwave frequencies by implementing high performance channel material, InGaAs with 80% indium, on GaAs substrates using a quaternary AlGaAsSb buffer and barrier. This structure improves the performance of millimeterwave transistors while retaining the low cost of established GaAs fabrication technologies by using the flexibility of metamorphic growth of III-V semiconductors.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device measurement; AlGaAsSb-InGaAs-GaAsSb; AlGaAsSb/InGaAs/GaAsSb metamorphic HEMT; III-V semiconductors; high gain; impact ionization; low noise figure; Current measurement; Gallium arsenide; HEMTs; III-V semiconductor materials; Impact ionization; Indium gallium arsenide; MODFETs; Noise figure; Performance gain; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205357

Filename

1205357